I-Graphite SiC Crucible

1.Ubuchwepheshe obuthuthukisiwe:Indlela yokubumba esetshenzisiwe ilingana nokucindezela okuphezulu kokubumba nge-isotropy enhle, ukuminyana okuphezulu, amandla aphezulu, ukubumbana okufanayo, futhi akukho sici.
2.Ukumelana nokugqwala: I-crucible inebanga lokushisa elingu-400-1600 ° C, futhi ingakhethwa ngokuya ngezigaba ezahlukene.
3.Ukumelana nezinga lokushisa eliphezulu:Izinto ezingaphili ezisetshenziswayo ezingezona ezensimbi zinokuhlanzeka okuphezulu futhi azivezi ukungcola okuyingozi enqubweni yokuncibilika kwensimbi.
4.Ukumelana ne-oxidation:Ukusetshenziswa kwamafomula athuthukisiwe kanye nezinto ezisiza ukulwa ne-antioxidant kuthuthukisa ikhono le-antioxidant lezinto eziphikisayo.
Ukuzinza okuphezulu kwezinga lokushisa: I-SiC inokusimama okuhle kakhulu kwe-thermal futhi ingasekela amazinga okushisa aphezulu ngaphandle kokukhubazeka noma ukuqhekeka.I-SiC crucibles ingasetshenziswa ekushiseni kuka-1600 ° C, okuyenza ilungele ukusetshenziswa kwezinga lokushisa eliphezulu.

Ukumelana namakhemikhali: I-SiC imelana kakhulu nokuhlaselwa kwamakhemikhali ngama-asidi nezinye izinto ezonakalisayo, okwenza ama-SiC crucibles afanele ukusetshenziswa nezinhlobonhlobo zamakhemikhali, okuhlanganisa izinsimbi ezincibilikisiwe, usawoti, nama-asidi.

Ukumelana nokushaqeka okuhle kakhulu kokushisa: I-SiC ine-coefficient ephansi yokwandisa ukushisa futhi ingamelana nezinguquko ezisheshayo ezingeni lokushisa ngaphandle kokuqhekeka.Lokhu kwenza ama-SiC crucibles alungele izinhlelo zokusebenza ezibandakanya ukushisisa okusheshayo nokupholisa imijikelezo.

Ukungcoliswa okuphansi: I-SiC into engasebenzi engaphenduli ngezinto eziningi.Lokhu kusho ukuthi iziphambano ze-SiC azingcolisi izinto ezicutshungulwayo, ezibalulekile ocwaningweni lwesayensi yezinto kanye nasekusetshenzisweni kwezimboni.

Impilo yesevisi ende: Iziphambano ze-SiC zingahlala iminyaka eminingana ngokunakekelwa nokugcinwa okufanele.Futhi ziyinketho engabizi kakhulu uma kuqhathaniswa nezinye izinhlobo ze-crucibles.

I-high conductivity kagesi: I-SiC iyimpahla ye-semiconductor ene-conductivity ephezulu kagesi, futhi ifanele ukusetshenziswa ezinhlelweni zikagesi neze-semiconductor.